B-8 01/99
2N3994, 2N3994A
P-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source Voltage 25 V
Reverse Gate Drain Voltage 25 V
Continuous Forward Gate Current – 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
At 25°C free air temperature: 2N3994 2N3994A Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
25 25 V I
G
= 1 µA, V
DS
= ØV
Gate Source Cutoff Voltage V
GS(OFF)
1 5.5 1 5.5 V V
DS
= – 10V, I
D
= – 1 µA
Drain Saturation Current (Pulsed) I
DSS
– 2 – 2 mA V
DS
= – 10V, V
GS
= ØV
Drain Reverse Current I
DGO
– 1.2 – 1.2 nA V
DG
= – 15V, I
S
= ØA
– 1.2 – 1.2 µA V
DG
= – 15V, I
S
= ØA T
A
= 150°C
Drain Cutoff Current I
D(OFF)
– 1.2 – 1.2 nA V
DS
= – 10V, V
GS
= 10V
– 1 – 1 µA V
DS
= – 10V, V
GS
= 10V T
A
= 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance r
ds(on)
300 300 Ω V
GS
= ØV, I
D
= Ø A f = 1 kHz
Common Source
| Y
fs
| 410510mSV
DS
= – 10V, V
GS
= ØV f = 1 kHz
Forward Transmittance
Common Source Input Capacitance C
iss
16 12 pF V
DS
= – 10V, V
GS
= ØV f = 1 MHz
Common Source
C
rss
5 3.5 pF V
DS
= Ø, V
GS
= 10V f = 1 MHz
Reverse Transfer Capacitance
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Databook.fxp 1/13/99 2:09 PM Page B-8