Ty pe 2N3960
Geometry 0003
Polarity NPN
Qual Level: JAN - JANTXV
Data Sheet No. 2N3960
Generic Part Number:
2N3960
REF: MIL-PRF-19500/399
Features:
• General-purpose low-power NPN
silicon transistor.
• Housed in TO-18 case.
• Also available in chip form using
the 0003 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/399 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage V CEO 12 V
Collector-Base Voltage V CBO 20 V
Emitter-Base Voltage V EBO 4.5 V
Power Dissipation, T A = 25 o C 400 mW
Derate above 25 o C 2.3 mW/ o C
Operating Junction Temperature T J -65 to +200 o C
Storage Temperature T STG -65 to +200 o C
Maximum Ratings
T C = 25 o C unless otherwise specified
P T
TO-18