2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N3906
PZT3906
MMBT3906
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
C
B
E
TO-92
B
C
C
SOT-223
E
C
B
E
SOT-23
Mark: 2A
 1997 Fairchild Semiconductor Corporation