1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
32
2N3905, 2N3906 Switching Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Version 2004-01-20
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25/C) Grenzwerte (T
A
= 25/C)
2N3905, 2N3906
Collector-Emitter-voltage B open - V
CE0
40 V
Collector-Base-voltage E open - V
CE0
40 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation – Verlustleistung P
tot
625 mW
1
)
Collector current – Kollektorstrom (dc) - I
C
100 mA
Peak collector current – Kollektorspitzenstrom - I
CM
200 mA
Junction temp. – Sperrschichttemperatur T
j
150/C
Storage temperature – Lagerungstemperatur T
S
- 55…+ 150/C
Characteristics (T
j
= 25/C) Kennwerte (T
j
= 25/C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
- I
C
= 10 mA, - I
B
= 1 mA
- I
C
= 50 mA, - I
B
= 5 mA
- V
CEsat
- V
CEsat
–
–
–
–
250 mV
400 mV
Base saturation voltage – Basis-Sättigungsspannung
- I
C
= 10 mA, - I
B
= 1 mA
- I
C
= 50 mA, - I
B
= 5 mA
- V
BEsat
- V
BEsat
–
–
–
–
850 mV
950 mV
Collector cutoff current – Kollektorreststrom
- V
CE
= 30 V, - V
EB
= 3 V - I
CEV
– – 50 nA
Emitter cutoff current – Emitterreststrom
- V
CE
= 30 V, - V
EB
= 3 V - I
EBV
– – 50 nA