UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904 / 2N3904
!Features
1) BVCEO > 40V (IC = 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
!Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT3904
UMT3
R1A
T106
3000
SST3904
SST3
R1A
T116
3000
MMST3904
SMT3
R1A
T146
3000
TO-92
-
T93
3000
2N3904
!Absolute maximum ratings (Ta = 25°C)
2N3904
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
60
40
6
0.2
0.35
150
−55~+150
Unit
V
V
V
A
W
W
W
PC
0.2
0.625
*
°C
°C
*
When mounted on a 7 x 5 x 0.6 mm ceramic board.
SST3904, MMST3904
UMT3904,
SST3904,
MMST3904
!External dimensions (Units : mm)
UMT3904
SST3904
MMST3904
2N3904
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06 +0.1
−0.05
(2)(1)
(3)
0~0.1
2.8
±
0.2
1.6
0.3
~
0.6
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06 +0.1
−0.05
(2)(1)
(3)
0~0.1
(2)(1)
(3)
0.1
~
0.4
2.1
±
0.1
1.25
±
0.1
0.9±0.1
0.2 0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
−0
4.8
±
0.2
(12.7Min.)
4.8±0.2 3.7±0.2
5 0.45±0.1 2.3
0.5
+0.15
−0.05
2.5
+0.3
−0.1
(1) (2) (3)
All terminals have same dimensions
All terminals have same dimensions
All terminals have same dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
2.5Min.
!Electrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCBO
BVCEO
BVEBO
ICES
IEBO
60
40
6
-
-
-
-
-
-
-
-
-
-
50
50
V
V
V
nA
nA
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 30V
VEB = 3V
- - 0.95
Base-emitter saturation voltage VBE(sat)
0.65 - 0.85
V
- - 0.3 IC/IB = 50mA/5mA
Collector-emitter saturation voltage VCE(sat)
- - 0.2
V
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
IC/IB = 10mA/1mA
30 - -
60 - -
DC current transfer ratio hFE 100 - 300 -
70 - -
40 - - VCE = 1V , IC = 0.1mA
VCE = 1V , IC = 1mA
VCE = 1V , IC = 10mA
VCE = 1V , IC = 50mA
VCE = 1V , IC = 100mA
Transition frequency
Collector output capacitance
fT
Cob
300
-
-
-
-
4
MHz
pF
VCE = 20V , IE = −10mA, f = 100MHz
VCB = 10V , f = 100kHz
Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz
Delay time td - - 35 ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mARise time tr - - 35 ns
Storage time tstg - - 200 ns VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA
VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA Fall time tf - - 50 ns
~