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2N3866

器件描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:331.25KB,共5页
Sponsor by e络盟
器件资料摘要:
MSC1067.PDF 3-10-99
2N3866 / 2N3866A
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter 30 Vdc
V CBO Collector-Base Voltage 55 Vdc
V EBO Emitter-Base Voltage 3.5 Vdc
I C Collector Current 400 mA
Thermal Data
P D Total Device Dissipation
Derate above 25ºC
5.0
28.6
Watts
mW/ º C
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
• 800 MHz Current-Gain Bandwidth Product
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855