2N3810DCSM
器件描述:DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
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器件资料摘要:
LAB
SEME
2N3810DCSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95
DUAL HIGH GAIN
PNP TRANSISTORS IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• HERMETIC CERAMIC SURFACE
MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
APPLICATIONS:
Suitable for use in high gain, low noise
differential amplifier applications.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
1
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
Derate above 25°C
T
STG
Storage Temperature Range
–60V
–60V
–5V
–50mA
500mW 600mW
2.9mW / °C 3.4mW / °C
–65 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
LCC2 PACKAGE
Underside View
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C unless otherwise stated)
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
A
2
1
3
4
56
6.22 ± 0.13
(0.245 ± 0.005)
2
.
54 ±
0.
13
(
0
.
10 ± 0.
005)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
4.
32 ±
0.
13
(
0
.
170
±
0.
005)
0
.
64 ± 0.
08
(
0
.
025 ± 0.
003)
0.23
(0.009)
rad.
A =
NOTES
1. Base – Emitter Diode Open Circuited.
EACH SIDE TOTAL DEVICE