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Prelim. 7/96
LAB
SEME
2N3799X
PNP, LOW NOISE
AMPLIFIER
TRANSISTOR
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
CECC SCREENING OPTIONS
LOW NOISE AMPLIFIER
APPLICATIONS:
Low Level Amplifier
Instrumentation Amplifiers
General Purpose
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
B
= 0)
I
C
Collector Current
P
D
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
R
G71JA
Thermal Resistance Junction to Ambient
R
G71JC
Thermal Resistance Junction to Case
–60V
–50V
–5V
–50mA
360mW
2.06mW / °C
1.2W
6.86mW / °C
–65 to +200°C
0.49°C/mW
0.15°C/mW
MECHANICAL DATA
Dimensions in mm (inches)
TO–18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
13
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.