2N3771
器件描述:HIGH POWER NPN SILICON TRANSISTOR
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器件资料摘要:
2N3771
2N3772
HIGH POWER NPN SILICON TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The 2N3771, 2N3772 are silicon epitaxial-base
NPN transistors mounted in Jedec Jedec TO-3
metal case. They are intended for linear
amplifiers and inductive switching applications.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N3771 2N3772
V
CEO
Collector-Emitter Voltage (I
E
= 0) 40 60 V
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5V) 50 80 V
V
CBO
Collector-Base Voltage (I
B
= 0) 50 100 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 7 V
I
C
Collector Current 30 20 A
ICM Collector Peak Current 30 30 A
I
B
Base Current 7.5 5 A
I
BM
Base Peak Current 15 15 A
P
tot
Total Dissipation at T
c
≤ 25
o
C 150 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
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