MSC1027.PDF 02-24-99
2N3720
ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
VCEO* Collector-Emitter Voltage 60 Vdc
VCB* Collector-Base Voltage 60 Vdc
VEB* Emitter-Base Voltage 4.0 Vdc
IC* Peak Collector Current 10 Adc
IC* Continuous Collector Current 3.0 Adc
IB* Base Current 0.5 Adc
TSTG* Storage Temperature -65 to 200 °C
TJ* Operating Junction Temperature -65 to 200 °C
PD* Total Device Dissipation
TC = 25°C
Derate above 25°C
6.0
34.3
Watts
mW/°C
PD*
θ JC
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction to Case
Junction to Ambient
1.0
5.71
29
175
Watts
mW/°C
°C/W
°C/W
Silicon PNP
Power Transistors
FEATURES:
• Collector-Emitter Sustaining Voltage:
VCEO(SUS) = 60 Vdc (Min) - 2N3720
• DC Current Gain:
hFE = 25-180 @ IC = 1.0 Adc
• Low Collector-Emitter Saturation Voltage:
VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc
• High Current-Gain - Bandwidth Product:
fT = 90 MHz (Typ)
TO-5
APPLICATIONS:
• High-Speed Switching
• Medium-Current Switching
• High-Frequency Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. They are intended for
use in Commercial, Industrial, and Military power switching, amplifier, and
regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized
to further increase the SOA capability and inherent reliability of these
devices. The temperature range to 200°C permits reliable operation in high
ambients, and the hermetically sealed package insures maximum reliability
and long life.
* Indicates JEDEC registered Data.