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Prelim. 2/00
2N3637CSM
PNP SILICON TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
FEATURES
• High Voltage Switching
Low Power Amplifier Applications
Hermetic Ceramic Surface Mount
Package
APPLICATIONS:
CECC Screening Options
Space Quality Levels Options.
V
CEO
Collector – Emitter Voltage
V
CBO
Collector – Base Voltage
V
EBO
Emmiter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ T
A
= 25°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
175V
175V
5V
1A
500mW
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
LCC1
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54 ±
0.
13
(
0
.
10 ±
0.
005)
0.
76
± 0.
1
5
(
0
.
03 ±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3