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Prelim. 7/99
2N3637
PNP SILICON TRANSISTOR
FEATURES
• High Voltage Switching
• Low Power Amplifier Applications
• Hermetic TO39 Package
APPLICATIONS:
• General Purpose
• High Speed Saturated Switching
V
CEO
Collector – Emitter Voltage
V
CBO
Collector – Base Voltage
V
EBO
Emmiter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
175V
175V
5V
1A
1W
5.71mW/ °C
5W
28.6mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
6.10 (0.240)
6.60 (0.260)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
ty p .
45
1
2
3