2N3502
2N3503
2N3504
2N3505
Prelim. 4/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
- 60V
-60V
-5V
-45V
-45V
-5V
3 W
0.7 W
1.3 W
0.4 W
PNP SILICON PLANAR EPITAXIAL
TRANSISTORS
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
APPLICATIONS:
These PNP silicon planar epitaxial trasistors
are designed for digital and analog
applications at current levels up 0.5 amps.
Maximum Voltages
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
Maximum Power Dissipation
P
D
Total Dissipation @ 25°C Case Temperature
P
D
Total Dissipation@ 25°C Free Air Temperature
T
J
Storage Temperature
Operating Junction Temperature
MECHANICAL DATA
Dimensions in mm (inches)
TO18 METAL PACKAGE
TO5 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS(T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
13
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.
G30G2EG38G39
G28G30G2EG30G33G35G29
G6DG61G78G2E
G31G32G2EG37G30
G28G30G2EG35G30G30G29
G6DG69G6EG2E
G36G2EG31G30G20G28G30G2EG32G34G30G29
G36G2EG36G30G20G28G30G2EG32G36G30G29
G38G2EG38G39G20G28G30G2EG33G35G29
G39G2EG34G30G20G28G30G2EG33G37G29
G37G2EG37G35G20G28G30G2EG33G30G35G29
G38G2EG35G31G20G28G30G2EG33G33G35G29
G37G2EG37G35G20G28G30G2EG33G30G35G29
G38G2EG35G31G20G28G30G2EG33G33G35G29
G64G69G61G2E
G30G2EG36G36G20G28G30G2EG30G32G36G29
G31G2EG31G34G20G28G30G2EG30G34G35G29
G30G2EG37G31G20G28G30G2EG30G32G38G29
G30G2EG38G36G20G28G30G2EG30G33G34G29
G32G2EG35G34
G28G30G2EG31G30G30G29
G35G2EG30G38G20G28G30G2EG32G30G30G29
G74G79 G70 G2E
G34G35GB0
G31
G32
G33
2N3503
2N3505
2N3502
2N3504
2N3502
2N3503
2N3504
2N3505
-65°C to +200°C
200°C