EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2N3442

器件描述:10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
器件厂商:MOTOROLA [Motorola, Inc]
文件大小:135.65KB,共4页
Sponsor by e络盟
器件资料摘要:
1
Motorola Bipolar Power Transistor Device Data
C0072C0105C0103C0104C0045C0080C0111C0119C0101C0114 C0073C0110C0100C0117C0115C0116C0114C0105C0097C0108
C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN silicon power transistor designed for applications in industrial and commercial
equipment including high fidelity audio amplifiers, series and shunt regulators and
power switches.
• Collector –Emitter Sustaining Voltage —
V
CEO(sus)
= 140 Vdc (Min)
• Excellent Second Breakdown Capability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Value
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎ
V
CEO
ÎÎÎÎÎÎÎ
140
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
V
CB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
160
ÎÎÎÎÎ
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎ
V
EB
ÎÎÎÎÎÎÎ
7.0
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Collector Current — Peak
ÎÎÎÎÎÎ
I
C
ÎÎÎÎÎÎÎ
10
15**
ÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
Peak
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
I
B
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
7.0

ÎÎÎÎÎ
ÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ T
C
= 25C0095C
Derate above 25C0095C ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
P
D
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
117
0.67 ÎÎÎÎÎ
ÎÎÎÎÎ
Watts
W/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎÎÎ
ÎÎÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Max
ÎÎÎÎÎ
ÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎ
R
θJC
ÎÎÎÎÎÎÎ
1.5
ÎÎÎÎÎ
C0095C/W
* Indicates JEDEC Registered Data.
** This data guaranteed in addition to JEDEC registered data.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3442/D
 Motorola, Inc. 1995
C0050C0078C0051C0052C0052C0050
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7