2N3439
器件描述：SILICON NPN TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：66.86KB，共4页
Sponsor by e络盟器件资料摘要：
2N3439
2N3440
SILICON NPN TRANSISTORS
a73 SGS-THOMSON PREFERRED SALESTYPES
a73 NPN TRANSISTOR
DESCRIPTION
The 2N3439, 2N3440 are silicon epitaxial planar
NPN transistors in jedec TO-39 metal case
designed for use in consumer and industrial
line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
INTERNAL SCHEMATIC DIAGRAM
June 1997
TO-39
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N3439 2N3440
V
CBO
Collector-Base Voltage (I
E
= 0) 450 300 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 350 250 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
IC Collector Current 1 A
IB Base Current 0.5 A
P
tot
Total Dissipation at T
c
≤ 25
o
C10W
tot
Total Dissipation at T
amb
≤ 50
o
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
1/4
2N3440
SILICON NPN TRANSISTORS
a73 SGS-THOMSON PREFERRED SALESTYPES
a73 NPN TRANSISTOR
DESCRIPTION
The 2N3439, 2N3440 are silicon epitaxial planar
NPN transistors in jedec TO-39 metal case
designed for use in consumer and industrial
line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
INTERNAL SCHEMATIC DIAGRAM
June 1997
TO-39
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N3439 2N3440
V
CBO
Collector-Base Voltage (I
E
= 0) 450 300 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 350 250 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
IC Collector Current 1 A
IB Base Current 0.5 A
P
tot
Total Dissipation at T
c
≤ 25
o
C10W
tot
Total Dissipation at T
amb
≤ 50
o
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
1/4