Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439
2N3440
TO-39
High Voltage Silicon Planar Transistors used in High Voltage &
High Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)
DESCRIPTION SYMBOL 2N3439 2N3440 UNITS
Collector -Emitter Voltage VCEO 350 250 V
Collector -Base Voltage VCBO 450 300 V
Emitter -Base Voltage VEBO 7.0 V
Collector Current Continuous IC 1.0 A
Base Current IB 0.5 A
Power Dissipation@ Ta=25 degC PD 1.0 W
Derate Above 25 deg C 5.7 mW/deg C
Power Dissipation@ Tc=25 degC PD 5.0 W
Derate Above 25 deg C 28.6 mW/deg C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Ambient Rth(j-a) 175 deg C/W
Junction to Case Rth(j-c) 35 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2N3439 2N3440 UNITS
Collector -Emitter Voltage VCEO(sus)* IC=50mA,IB=0 >350 >250 V
Collector-Cut off Current ICBO VCB=360V, IE=0 <20 - uA
VCB=250V, IE=0 - <20 uA
ICEO VCE=300V, IB=0 <20 - uA
VCE=200V, IB=0 - <50 uA
ICEX VCE=450V,VBE=1.5V <500 - uA
VCE=300V,VBE=1.5V - <500 uA
Emitter-Cut off Current IEBO VEB=6V, IC=0 <20 <20 uA
DC Current Gain hFE* IC=2mA,VCE=10V >30 -
IC=20mA,VCE=10V 40-160 40-160
Collector Emitter Saturation Voltage VCE(Sat)* IC=50mA,IB=4mA <0.5 <0.5 V
Base Emitter Saturation Voltage VBE(Sat) * IC=50mA,IB=4mA <1.3 <1.3 V
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
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