7V
1A
0.5A
5W
1W
–55 to 200°C
200°C
2N3439
2N3440
Prelim.12/99
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
• DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HIGH VOLTAGE
APPLICATIONS:
These devices are particularly suited as dri-
vers in high-voltage low current inverters,
switing and series regulators.
V
CBO
Collector – Base Voltage (I
E
= 0)
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Collector Current
I
B
Base Current
P
tot
Total Power Dissipation at T
case
GA3 25°C
T
amb
GA3 50°C
T
stg
Storage Temperature
T
j
Junction Temperature
450V
350V
300V
250V
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
2N3439 2N3440
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
TO39 PACKAGE