MSC0983A.DOC 12-02-98
2N3421
SYMBOL
VCBO* Collector-Base Voltage 125 Volts
VCEO* Collector-Emitter Voltage 80 Volts
VEBO* Emitter-Base Voltage 8 Volts
IC* D.C. Collector Current 3 Amps
IC* Peak Collector Current 5 Amps
TSTG* Storage Temperature -65 to 200 °C
TJ* Operating Junction Temperature -65 to 200 °C
PT* Power Dissipation
TC = 25°C Ambient
TC = 100°C Case
1.0
15
Watts
Watts
3 Amp, 125V,
NPN Silicon Power
Transistors
JAN, JTX, JTXV, JANS
FEATURES:
• Meets MIL-S-19500/393
• Collector-Base Voltage: up to 125
• Peak Collector Current: 5A
• High Power Dissipation in TO-5: 15W @ TC = 100°C
• Fast Switching
TO-5
APPLICATIONS:
• Power Supply
• Pulse Amplifier
• High Frequency Power Switching
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
* Indicates MIL-S-19500/393