2N3415
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N3415
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 25 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 500 mA
TJ, Tstg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N3415
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
Rθ
JA
Thermal Resistance, Junction to Ambient 200 °C/W
E
C
B
TO-92
 1997 Fairchild Semiconductor Corporation