2N3055
器件描述：COMPLEMENTARY SILICON POWER TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：47.01KB，共4页
Sponsor by e络盟器件资料摘要：
2N3055
MJ2955
COMPLEMENTARY SILICON POWER TRANSISTORS
a73 STMicroelectronics PREFERRED
SALESTYPES
a73 COMPLEMENTARY NPN-PNP DEVICES
DESCRIPTION
The 2N3055 is a silicon Epitaxial-Base Planar
NPN transistor mounted in Jedec TO-3 metal
case.
It is intended for power switching circuits, series
and shunt regulators, output stages and high
fidelity amplifiers.
The complementary PNP type is MJ2955.
INTERNAL SCHEMATIC DIAGRAM
August 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N3055
PNP MJ2955
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
V
CER Collector-Emitter Voltage (RBE ≤ 100Ω)
70 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
IC Collector Current 15 A
I
B
Base Current 7 A
P
tot Total Dissipation at Tc ≤ 25
o
C 115 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
For PNP types voltage and current values are negative.
1
2
TO-3
®
1/4
MJ2955
COMPLEMENTARY SILICON POWER TRANSISTORS
a73 STMicroelectronics PREFERRED
SALESTYPES
a73 COMPLEMENTARY NPN-PNP DEVICES
DESCRIPTION
The 2N3055 is a silicon Epitaxial-Base Planar
NPN transistor mounted in Jedec TO-3 metal
case.
It is intended for power switching circuits, series
and shunt regulators, output stages and high
fidelity amplifiers.
The complementary PNP type is MJ2955.
INTERNAL SCHEMATIC DIAGRAM
August 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N3055
PNP MJ2955
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
V
CER Collector-Emitter Voltage (RBE ≤ 100Ω)
70 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
IC Collector Current 15 A
I
B
Base Current 7 A
P
tot Total Dissipation at Tc ≤ 25
o
C 115 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
For PNP types voltage and current values are negative.
1
2
TO-3
®
1/4