2N3053
器件描述:MEDIUM POWER SILICON NPN PLANAR TRANSISTOR
文件大小:17.82KB,共2页
Sponsor by e络盟
器件资料摘要:
Prelim.01/01
2N3053
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
MEDIUM POWER SILICON
NPN PLANAR TRANSISTOR
FEATURES
• V
CEO =
40V
I
C
= 0.7A
P
tot
= 5W
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
CER
Collector – Emitter Sustaining Voltage
V
CEX
Collector - Emiiter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
TOT
Power Dissipation T
amb
= 25°C
T
case
= 25°C
T
j
Junction Temperature
T
stg
Storage Temperature
R
th(jc)
Thermal Resistance Junction to Case
R
th(ja)
Thermal Resistance Junction to Ambient
60V
40V
50V
60V
5V
0.7A
1W
5W
200°C
–65 to 200°C
35°C / W
175°C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
Pin 1 = Emitter
Underside View
Pin 2 = Base Pin 3 = Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3