NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019
2N3020
TO-39
Metal Can Package
Designed for use in General Purpose Amplifier and High Speed Switching Applications
These Transistors are also Suitable for High Current Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector Emitter Voltage VCEO 80 V
Collector Base Voltage VCBO 140 V
Emitter Base Voltage VEBO 7 V
Collector Current ICM 1 A
Power Dissipation @ Ta=25º C PD 800 mW
Power Dissipation@ Tc=25ºC 5 W
Junction Temperature Tj +200 ºC
Storage Temperature Tstg -65 to +200 ºC
THERMAL RESISTANCE
Junction to Ambient Rth(j-a) 218.7 ºC/W
Junction to Case Rth(j-c) 35 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
Collector Emitter Breakdown Voltage BVCEO * IC=30mA,IB=0 80 V
Collector Base Breakdown Voltage BVCBO IC=100µA, IE=0 140 V
Emitter Base Breakdown Voltage BVEBO IE=100µA, IC =O 7 V
Collector Leakage Current ICBO VCB=90V, IE=0 10 nΑ
VCB=90V, IE=0, Ta=150ºC 10 µA
Emitter Leakage Current IEBO VEB=5V, IC=0 10 nΑ
Collector Emitter Saturation Voltage VCE(sat) * IC =150mA, IB =15mA 0.2 V
IC =500mA, IB =50mA 0.5 V
Base Emitter Saturation Voltage VBE(sat) * IC=150mA, IB =15mA 1.1 V
Continental Device India Limited Data Sheet Page 1 of 4
Continental Device India Limited
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