2N3019
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS
DESCRIPTION
The 2N3019 is a silicon planar epitaxial NPN
transistors in Jedec TO-39 metal case, designed
for high-current, high frequency amplifier
application. It feature high gain and low saturation
voltage.

INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 140 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
C
Collector Current 1 A
P
tot
Total Dissipation at T
amb
≤ 25
o
C
at T
case
≤ 25
o
C
0.8
5
W
W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
TO-39
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