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2N2907ADIE
A Microsemi Company
580 Pleasant St. Phone: 617-924-9280
Watertown, MA 02172 Fax: 617-924-1235
DIE SPECIFICATION
SWITCHING TRANSISTOR
PNP SILICON
FEATURES:
n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n LOW VCE(sat): .4V @ IC = 150 mAdc
Absolute Maximum Ratings:
Symbol Parameter Limit Unit
Vceo Collector-Emitter Voltage 60 Vdc
Vcbo Collector-Base Voltage 60 Vdc
Vebo Emitter-Base Voltage 5.0 Vdc
Ic Collector Current- Continuous 600 mAdc
Tj, Tstg Operating Junction & Storage -65 to +200 °C
Temperature Range
Sertech reserves the right to make changes to any product design, specification, or other information at any time without
prior notice. Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98
PHYSICAL DIMENSIONS
Packaging Options:
W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack) B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other
Processing Options:
Standard: Capable of JANTXV applications (No Suffix)
Suffix C: Commercial
Suffix S: Capable of S-Level equivalent applications
Metallization Options:
Standard: Al Top / Au Backside (No Dash #)
Dash 1: Al Top / TiPdAg Backside
ORDERING INFORMATION:
PART #: 2N2907A_ _ - _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
MSC0948.PDF