2N2905A
器件描述:HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR
文件大小:18.26KB,共2页
Sponsor by e络盟
器件资料摘要:
LAB
SEME
2N2905A
Prelim. 6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
HIGH SPEED
MEDIUM POWER
PNP SWITCHING TRANSISTOR
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
V
CBO
Collector - Base Voltage
V
CEO
Collector - Emitter Voltage
V
EBO
Emitter - Base Voltage
I
C
Collector Current Continuous
P
D
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
–60V
–60V
–5V
600mA
600mW
3.43mW / °C
3W
17.2mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
R
c113JA
Thermal Resistance, Junction to Ambient 292°C/W
R
c113JC
Thermal Resistance, Junction to Case 58°C/w
THERMAL CHARACTERISTICS