2N2905A
2N2907A
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905A and 2N2907A are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated switching and general purpose
applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
=0) -60 V
VCEO Collector-Emitter Voltage (IB =0) -60 V
VEBO Emitter-Base Voltage (IC =0) -5 V
I
C
Collector Current -0.6 A
Ptot Total Dissipation at Tamb ≤ 25
o
C
for 2N2905A
for 2N2907A
at T
case
≤ 25
o
C
for 2N2905A
for 2N2907A
0.6
0.4
3
1.8
W
W
W
W
T
stg
Storage Temperature -65 to 200
o
C
Tj Max. Operating Junction Temperature 200
o
C
TO-18 TO-39
2N2905A approved to CECC 50002-100,
2N2906A approved to CECC 50002-103
available on request.
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