2N2905
2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905 and 2N2907 are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905) and in Jedec TO-18 (for 2N2907) metal
case. They are designed for high speed saturated
switching and general purpose application.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
=0) -60 V
VCEO Collector-Emitter Voltage (IB =0) -40 V
VEBO Emitter-Base Voltage (IC =0) -5 V
I
C
Collector Current -0.6 A
Ptot Total Dissipation at Tamb ≤ 25
o
C
for 2N2905
for 2N2907
at T
case
≤ 25
o
C
for 2N2905
for 2N2907
0.6
0.4
3
1.8
W
W
W
W
T
stg
Storage Temperature -65 to 200
o
C
Tj Max. Operating Junction Temperature 200
o
C
TO-18 TO-39
2N2905 approved to CECC 50002-102,
2N2907 approved to CECC 50002-103
available on request.
1/5