2N2369
January 1989
HIGH-FREQUENCY SATURATED SWITCH
The 2N2369 is a silicon planar epitaxial NPN tran-
sistorin JedecTO-18 metal case. It is designed spe-
cifically for high-speed saturated switching applica-
tions at current levels from 100 µA to 100 mA.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-base Voltage (I
E
=0) 40 V
V
CES
Collector-emitter Voltage (V
BE
=0) 40 V
V
CEO
Collector-emitter Voltage (I
B
=0) 15 V
V
EBO
Emitter-base Voltage (I
C
= 0) 4.5 V
I
CM
Collector Peak Current (t = 10 µs) 0.5 A
P
tot
Total Power Dissipation at T
amb
≤ 25 °C
at T
case
≤ 25 °C
at T
case
≤ 100 °C
0.36
1.2
0.68
W
W
W
T
stg
,T
j
Storage and Junction Temperature – 65 to 200 °C
Products approved to CECC 50004-022/023 available on request.
DESCRIPTION
TO-18
INTERNAL SCHEMATIC DIAGRAM
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