1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
15 Vdc
Collector–Emitter Voltage V
CES
40 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
4.5 Vdc
Collector Current (10 C0109s pulse) I
C(Peak)
500 mA
Collector Current — Continuous I
C
200 mA
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
0.36
2.06
Watt
mW/°C
Total Device Dissipation @ T
C
= 100°C
Derate above 100°C
P
D
0.68
6.85
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
486 °C/W
Thermal Resistance, Junction to Case R
C0113JC
147 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 10 C0109A, V
BE
= 0) V
(BR)CES
40 — Vdc
Collector–Emitter Sustaining Voltage
(1)
(I
C
= 10 mAdc, I
B
= 0) V
CEO(sus)
15 — Vdc
Collector–Base Breakdown Voltage (I
C
= 10 C0109A, I
B
= 0) V
(BR)CBO
40 — Vdc
Emitter–Base Breakdown Voltage (I
E
= 10 C0109Adc, I
C
= 0) V
(BR)EBO
4.5 — Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0) 2N2369
(V
CB
= 20 Vdc, I
E
= 0, T
A
= 150°C) 2N2369A
I
CBO
—
—
0.4
30
C0109Adc
Collector Cutoff Current
(V
CE
= 20 Vdc, V
BE
= 0) 2N2369A
I
CES
— 0.4 C0109Adc
Base Current
(V
CE
= 20 Vdc, V
BE
= 0) 2N2369A
I
B
— 0.4 C0109Adc
1. Pulse Test: Pulse Width C0118 300 C0109s, Duty Cycle C0118 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N2369/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0050C0078C0050C0051C0054C0057
C0050C0078C0050C0051C0054C0057C0065
*Motorola Preferred Device
CASE 22–03, STYLE 1
TO–18 (TO–206AA)
1
2
3
C0042
 Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER