TECHNICAL DATA

NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
Devices Qualified Level
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2222A
2N2222AL
2N2222AUA
2N2222AUB




JAN
JANTX
JANTXV
JANS
JANHC

MAXIMUM RATINGS
Ratings Symbol All Types Unit
Collector - Emitter Voltage V CEO 50 Vdc
Collector - Base Voltage V CBO 75 Vdc
Emitter - Base Voltage V EBO 6.0 Vdc
Collector Current I C 800 mAdc
Total Power Dissipation @ T A = +25 0 C
2N2221A, L; 2N2222A, L (1)
2N2221AUA; 2N2222AUA (2)
2N222 1AUB; 2N2222AUB (1)
P T

0.5
0.65
0.50
W

Operating & Storage Junction Temperature Range T op , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Ambient
2N2221A, L; 2N2222A, L
2N2221AUA; 2N2 222AUA
2N2221AUB; 2N2222AUB
R θJA

325
210
325
0 C/W
1) Derate linearly 3.08 mW/ 0 C above T A > +37.5 0 C
2) Derate linearly 4.76 mW/ 0 C above T A > +63.5 0 C


TO-18* (TO-206AA)
2N2221A, 2N2222A


4 PIN*
2N2221AUA, 2N2222AUA


3 PIN*
2N2221AUB, 2N2222AUB
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 10 mAdc V (BR) CEO 50
Vdc
Collector - Base Cutoff Curr ent
V CB = 75 Vdc
V CB = 60 Vdc
I CBO


10
10
µAdc
ηAdc
Emitter - Base Cutoff Current
V EB = 6.0 Vdc
V EB = 4.0 Vdc
I EBO

10
10
µAdc
ηAdc
Collector - Base Cutoff Current
V CE = 50 Vdc I CES 50 ηAdc
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