2N2221A
器件描述:NPN SILICON PLANAR SWITCHING TRANSISTORS
文件大小:53.37KB,共3页
Sponsor by e络盟
器件资料摘要:
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A
2N2222A
TO-18
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL 2N2221A,22A UNIT
Collector -Emitter Voltage VCEO 40 V
Collector -Base Voltage VCBO 75 V
Emitter -Base Voltage VEBO 6.0 V
Collector Current Continuous IC 800 mA
Power Dissipation @Ta=25 degC PD 500 mW
Derate Above 25deg C 2.28 mW/deg C
@ Tc=25 degC PD 1.2 W
Derate Above 25deg C 6.85 mW/deg C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION VALUE
MIN MAX UNIT
Collector -Emitter Voltage VCEO IC=10mA,IB=0 40 - V
Collector -Base Voltage VCBO IC=10uA.IE=0 75 - V
Emitter-Base Voltage VEBO IE=10uA, IC=0 6.0 - V
Collector-Cut off Current ICBO VCB=60V, IE=0 - 10 nA
Ta=150 deg C
VCB=60V, IE=0 - 10 uA
ICEX VCE=60V, VEB=3V - 10 nA
Emitter-Cut off Current IEBO VEB=3V, IC=0 - 10 nA
Base-Cut off Current IBL VCE=60V, VEB=3V - 20 nA
Collector Emitter Saturation Voltage VCE(Sat)* IC=150mA,IB=15mA - 0.3 V
IC=500mA,IB=50mA 1.0 V
Base Emitter Saturation Voltage VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 V
IC=500mA,IB=50mA - 2.0 V
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 3