2N2219A
2N2222A
HIGH SPEED SWITCHES
DESCRIPTION
The 2N2219A and 2N2222A are silicon planar
epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.

INTERNAL SCHEMATIC DIAGRAM
June 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
=0) 75 V
V
CEO
Collector-Emitter Voltage (I
B
=0) 40 V
V
EBO
Emitter-Base Voltage (I
C
=0) 6 V
I
C
Collector Current 0.8 A
P
tot
Total Dissipation at T
amb
≤ 25
o
C
for 2N2219A
for 2N2222A
at T
case
≤ 25
o
C
for 2N2219A
for 2N2222A
0.8
0.5
3
1.8
W
W
W
W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 175
o
C
TO-18 TO-39
2N2219A approved to CECC 50002-100,
2N2222A approved to CECC 50002-101
available on request.
1/8