Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A
2N2219A
TO-39
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL 2N2218A,19A UNIT
Collector -Emitter Voltage VCEO 40 V
Collector -Base Voltage VCBO 75 V
Emitter -Base Voltage VEBO 6.0 V
Collector Current Continuous IC 800 mA
Power Dissipation @Ta=25 degC PD 800 mW
Derate Above 25deg C 4.57 mW/deg C
@ Tc=25 degC PD 3.0 W
Derate Above 25deg C 17.1 mW/deg C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION VALUE
MIN MAX UNIT
Collector -Emitter Voltage VCEO IC=10mA,IB=0 40 - V
Collector -Base Voltage VCBO IC=10uA.IE=0 75 - V
Emitter-Base Voltage VEBO IE=10uA, IC=0 6.0 - V
Collector-Cut off Current ICBO VCB=60V, IE=0 - 10 nA
Ta=150 deg C
VCB=60V, IE=0 - 10 uA
ICEX VCE=60V, VEB=3V - 10 nA
Emitter-Cut off Current IEBO VEB=3V, IC=0 - 10 nA
Base-Cut off Current IBL VCE=60V, VEB=3V - 20 nA
Collector Emitter Saturation Voltage VCE(Sat)* IC=150mA,IB=15mA - 0.3 V
IC=500mA,IB=50mA 1.0 V
Base Emitter Saturation Voltage VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 V
IC=500mA,IB=50mA - 2.0 V
G49G53G20G2FG20G49G45G43G51G43G20G37G30G30G30G30G30
G49G53G20G2FG20G49G45G43G51G43G20G37G35G30G31G30G30
G49G53G2FG49G53G4FG20G39G30G30G32
G4CG69G63G23G20G51G53G43G2FG4CG2DG20G30G30G30G30G31G39G2EG32
Continental Device India Limited Data Sheet Page 1 of 3