2N2218-2N2219
2N2221-2N2222
January 1989
HIGH-SPEED SWITCHES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-base Voltage (I
E
=0) 60 V
V
CEO
Collector-emitter Voltage (I
B
=0) 30 V
V
EBO
Emitter-base Voltage (I
C
=0) 5 V
I
C
Collector Current 0.8 A
P
tot
Total Power Dissipation at T
amb
≤ 25 °C
for 2N2218 and 2N2219
for 2N2221 and 2N2222
at T
case
≤ 25 °C
for 2N2218 and 2N2219
for 2N2221 and 2N2222
0.8
0.5
3
1.8
W
W
W
W
T
stg
Storage Temperature – 65 to 200 °C
T
j
Junction Temperature 175 °C
DESCRIPTION
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
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