Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
www.SEMICOA.com
2N2060
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2060J)
JANTX level (2N2060JX)
JANTXV level (2N2060JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
Matched, Dual Transistors
Low power
NPN silicon transistor
Features
Hermetically sealed TO-77 metal can
Also available in chip configuration
Chip geometry 0410
Reference document:
MIL-PRF-19500/270
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings TC = 25 C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 60 Volts
Collector-Base Voltage CBO 100 Volts
Emitter-Base Voltage EBO 7 Volts
Collector Current, Continuous I500 mA
Power Dissipation, TA = 25 C
Derate linearly above 25 C
PT
540 one section
600 both sections
3.08 one section
3.48 both sections
mW
mW
mW/ C
mW/ C
Power Dissipation, TC = 25 C
Derate linearly above 25 C
PT
1.5 one section
2.12 both sections
8.6 one section
12.1 both sections
W
W
mW/ C
mW/ C
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 C