2N1893S
器件描述:Type 2N1893S Geometry 4500 Polarity NPN
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器件资料摘要:
Ty pe 2N1893S
Geometry 4500
Polarity NPN
Qual Level: JAN - JANTXV
Data Sheet No. 2N1893S
Generic Part Number:
2N1893
REF: MIL-PRF-19500/182
Features:
• General-purpose low-power NPN
silicon transistor.
• Housed in TO-39 case.
• Also available in chip form using
the 4500 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/182 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter voltage V
CEO
80 V
Collector-Base Voltage V
CBO
120 V
Emitter-Base Voltage V
EBO
7.0 V
Collector - Emitter Voltage, R
BE
= 10 Ohms V
CER
100 V
Collector Current, Continuous I
C
500 mA
Power Dissipation, T
A
= 25
o
C 0.8 mW
Derate above 25
o
C 4.57 mW/
o
C
Power Dissipation, T
C
= 25
o
C 3.0 mW
Derate above 25
o
C 17.2 mW/
o
C
Operating Junction Temperature T
J
-55 to +200
o
C
Storage Temperature T
STG
-55 to +200
o
C
P
T
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
T
TO-39