2N1893
October 1988
GENERAL PURPOSE HIGH-VOLTAGE TYPE
The 2N1893 is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-39 metal case, designed for use
in high-performance amplifier, oscillator and switch-
ing circuits.
It provides greater voltage swings in oscillator and
amplifier circuits and more protection in inductive
switching circuits due to its 120 V collector-to-base
voltage rating.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-base Voltage (I
E
=0) 120 V
V
CER
Collector-emitter Voltage (R
BE
≤ 10 Ω)1
CEO
Collector-emitter Voltage (I
B
=0) 80 V
V
EBO
Emitter-base Voltage (I
C
=0) 7 V
I
C
Collector Current 0.5 A
P
tot
Total Power Dissipation at T
amb
≤ 25 °C
at T
case
≤ 25 °C
at T
case
≤ 100 °C
0.8
3
1.7
W
W
W
T
stg
,T
j
Storage and Junction Temperature – 65 to 200 °C
INTERNAL SCHEMATIC DIAGRAM
Products approved to CECC 50002-104 avail-
able on request.
DESCRIPTION
TO-39
1/5