2N1613
2N1711
January 1989
SWITCHES AND UNIVERSAL AMPLIFIERS
The 2N1613 and2N1711 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They
are designed for use in high-performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers
where low noise is an important factor.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-base Voltage (I
E
=0) 75 V
V
CER
Collector-emitter Voltage (R
BE
≤ 10 Ω)50
EBO
Emitter-base Voltage (I
C
=0) 7 V
I
C
Collector Current 500 mA
P
tot
Total Power Dissipation at T
amb
≤ 25 °C
at T
case
≤ 25 °C
at T
case
≤ 100 °C
0.8
3
1.7
W
W
W
T
stg
,T
j
Storage and Junction Temperature – 65 to 200 °C
Products approved to CECC 50002-104 avail-
able on request.
DESCRIPTION
TO-39
INTERNAL SCHEMATIC DIAGRAM
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