COMSET SEMICONDUCTORS 1/2
2N1595 thru 2N1599
SILICON THYRISTOR
Industrial-type, low-current silicon controlled rectifiers
in a three-lead package ideal for printed-circuit applications.
Current handling capability of 1.6 amperes at junction temperetures to 125°C
MAXIMUM RATINGS (*)
T
J
=125°C unless otherwise noted
Symbol Ratings
2N1595 2N1596 2N1597 2N1598 2N1599
V
RSM(REP)
Peak reverse blocking voltage * 50 100 200 300 400 V
I
T(RMS)
Forward Current RMS (all conduction
angles)
1.6 Amp
I
TSM
Peak Surge Current
(One Cycle, 60Hz, T
J
=-65 to +125°C)
15 Amp
P
GM
Peak Gate Power – Forward 0.1 W
P
G(AV)
Average Gate Power - Forward 0.01 W
I
GM
Peak Gate Current – Forward 0.1 Amp
V
GFM
Peak Gate Voltage - Forward 10 V
V
GRM
Peak Gate Voltage - Reverse 10 V
T
J

Operating Junction Temperature
Range
-65 to +125
T
STG
Storage Temperature Range -65 to +150
°C
ELECTRICAL CHARACTERISTICS
T
J
=25°C unless otherwise noted, R
GK
=1000Ω
Symbol Ratings
2N1595 2N1596 2N1597 2N1598 2N1599
V
DRM
Peak Forward Blocking
Voltage *
Min : 50 100 200 300 400 V
I
RRM
Peak Reverse Blocking Current
(Rated V
DRM
, T
J
=125°C)
Max : 1.0 mA