TECHNICAL DATA

LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
Devices Qualified Level
2N1131
2N1131L
2N1132
2N1132L




JAN
JANTX


MAXIMUM RATINGS
Ratings Symbol All Units Units
Collector - Emitter Voltage V CEO 40 Vdc
Collect or - Base Voltage V CBO 50 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Collector Current I C 600 mAdc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
0.6
2.0
W
W
Operating & Storage Temperature Range T op , T j - 65 to +200 °C
1) Derate linearly 3.4 mW/ 0 C for T A ≥ +25 0 C
2) Derate linearly 11.4 mW/ 0 C for T C ≥ +25 0 C
TO-39*

2N1131, 2N1132

TO-5*

2N1311L, 2N1312L
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 10 mAdc V (BR)CEO 40 Vdc
Collector - Base Breakdown Voltage
I C = 10 µAdc V (BR)CBO 50 Vdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc I EBO 100 µAdc
Collector - Emitter Cutoff Current
V CE = 50 Vdc, R BE ≤ 10 ohms I CER

10 mAdc
Collector - Base Cutoff Current
V CB = 50 Vdc
V CB = 30 Vdc
I CBO 10
1.0
µAdc

6 Lake Street, Lawrence, MA 01841
1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803
120 101
Page 1 of 2