2MBI 75P-140 2-Pack IGBT 1400V 75A
IGBT MODULE ( P-Series )
n Features
• Square SC SOA at 10 x I C
• Simplified Parallel Connection
• Narrow Distribution of Characteristics
• High Short Circuit Withstand-Capability
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Outline Drawing
n Maximum Ratings and Characteristics n Equivalent Circuit
• Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Collector-Emitter Voltage V CES 1400 V
Gate -Emitter Voltage V GES ± 20 V
Continuous TC=25°C 75
Continuous TC=80°C 50
Collector 1ms TC=25°C 150
Current 1ms TC=80°C 100
-I C 50
1ms -I C PULSE 100
Max. Power Dissipation P C 400 W
Operating Temperature T j +150 °C
Storage Temperature T stg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. V is 2500 V
Mounting *1 3.5
Terminals *2 3.5
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics ( at T j =25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I CES V GE =0V V CE =1400V 1.0 mA
Gate-Emitter Leackage Current I GES V CE =0V V GE = ± 20V 200 µ A
Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =50mA 6.0 8.0 9.0 V
T j = 25°C V GE =15V I C =50A 2.7 3.0
T j =125°C V GE =15V I C =50A 3.3
Input capacitance C ies V GE =0V 5000
Output capacitance C oes V CE =10V 750 pF
Reverse Transfer capacitance C res f=1MHz 330
t ON V CC =600V 1.2
t r I C =50A 0.6
t OFF V GE = ± 15V 1.0
t f R G =2,4 Ω 0.3
Diode Forward On-Voltage V F I F =50A V GE =0V 2.4 3.3 V
Reverse Recovery Time t rr I F =50A 350 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R th(j-c) IGBT 0.31
Thermal Resistance R th(j-c) Diode 0.66 °C/W
R th(c-f) With Thermal Compound 0.05
Screw Torque
V CE(sat)Collector-Emitter Saturation Voltage
Turn-on Time
Turn-off Time
V
µ s
I C
I C PULSE A
Nm