IGBT MODULE ( N series )
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Outline Drawing
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Collector-Emitter Voltage V CES 1200 V
Gate -Emitter Voltage V GES ± 20 V
Continuous I C 200
Collector 1ms I C PULSE 400
Current Continuous -I C 200
1ms -I C PULSE 400
Max. Power Dissipation P C 1500 W
Operating Temperature T j +150 °C
Storage Temperature T stg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. V is 2500 V
Mounting *1 3.5
Terminals *2 4.5
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
• Electrical Characteristics ( at T j =25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I CES V GE =0V V CE =1200V 2.0 mA
Gate-Emitter Leackage Current I GES V CE =0V V GE = ± 20V 30 µ A
Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =200mA 4.5 7.5 V
Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =200A 3.3 V
Input capacitance C ies V GE =0V 32000
Output capacitance C oes V CE =10V 11600 pF
Reverse Transfer capacitance C res f=1MHz 10320
t ON V CC =600V 0.65 1.2
t r I C =200A 0.25 0.6
t OFF V GE = ± 15V 0.85 1.5
t f R G =4.7 Ω 0.35 0.5
Diode Forward On-Voltage V F I F =200A V GE =0V 3.0 V
Reverse Recovery Time t rr I F =200A 350 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R th(j-c) IGBT 0.085
Thermal Resistance R th(j-c) Diode 0.18 °C/W
R th(c-f) With Thermal Compound 0.025
n Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
µ s
A
Nm