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2CK120

器件描述:SILICON EPITAXIAL PLANAR SWITCHING DIODE
器件厂商:SSE [Shanghai Sunrise Electronics]
文件大小:15.21KB,共1页
Sponsor by e络盟
器件资料摘要:
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250
o
C/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
SYMBOL VALUE UNITS
Reverse Voltage V
R
75 V
Peak Reverse Voltage V
RM
100 V
Forward Current (average) I
O
150 mA
Repetitive Forward Peak Current I
FRM
400 mA
Forward Voltage (I
F
=10mA) V
F
1V
Reverse Current (V
R
=20V) 25 nA
Reverse Current (V
R
=75V) 5 µA
Reverse Current (V
R
=20V,T
J
=100
o
C)
I
R2
50 µA
Capacitance (note 1) Ct 4 pF
Reverse Charge (I
F
=10mA) Qr 57 pC
Thermal Resistance (junction to ambient, note 2) R
θ
(ja) 0.35
o
C/mW
Operating Junction and Storage Temperature Range T
STG,
T
J
-55 +175
o
C
Notes:
1. V
R
=0V, f=1 MHz
2. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
http://www.sse-diode.com
2CK120
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
RATINGS
I
R1
TECHNICAL
SPECIFICATION
DO - 35
Dimensions in inches and (millimeters)
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56)
.120 (3.0)
.200 (5.1)
1.0 (25.4)
MIN.
DIA.
.060 (1.5)
.090 (2.3)
DIA.