EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2C3960

器件描述:Chip Type 2C3960 Geometry 0003 Polarity NPN
器件厂商:SEMICOA [Semicoa Semiconductor]
文件大小:29.98KB,共1页
Sponsor by e络盟
器件资料摘要:
Chip Ty pe 2C3960
Geometry 0003
Polarity NPN
Data Sheet No. 2C3960
Generic Packaged Part:
2N3960
Chip type 2C3960 by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
Part Numbers:
2N3960 , 2N3960UB, SD3960F, SQ3960,
SQ3960F
APPLICATIONS:
Designed for high-speed current-mode
logic switching.
Features:
Top Al - 15 kÅ min.
Backside Au - 6.5 kÅ nom.
Emitter 2.7 mils x 2.7 mils
Base 2.7 mils x 2.7 mils
Die Thickness
Chip Area
Top Surface
16 mils x 16 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter Test conditions Min Max Unit
BV CEO I C = 10.0 mA 12 --- V dc
BV CBO I C = 10 µA 20 --- V dc
BV EBO I E = 10.0 mA 4.5 --- V dc
I CEX V CE = 10 V, V EB = 2.0 V --- 5.0 nA
h FE1 I C = 1.0 mA dc, V CE = 1.0 V 25 --- ---
h FE2 I C = 10 mA dc, V CE = 1.0 V 40 400 ---
h FE3 I C = 30 mA dc, V CE = 1.0 V 25 --- ---
V CE(sat) I C = 30 mA dc, I B = 3.0 mA --- 0.3 V dc
Electrical Characteristics
T A = 25 o C
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 µs, duty cycle less than 2%.