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2C3019
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Chip Type 2C3019 Geometry 4500 Polarity PNP 器件厂商：SEMICOA [Semicoa Semiconductor] 厂商主页：http://www.snscorp.com/Semicoa.htm 文件大小：31.35KB 文件页数：1 PDF阅读：2C3019.pdf (点击阅读器件资料) 摘要： Chip Ty pe 2C3019 Geometry 4500 Polarity PNP Data Sheet No. 2C3019 Generic Packaged Parts: 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semi- conductors provides performance similar to these devices. Product Summary: Part Numbers: 2N3019 , 2N3019S , 2N3019UB, 2N3057, 2N3057A , 2N3700 , 2N3700UB , SD3019F, SQ3019, SQ3019F APPLICATIONS: Designed for general purpose switching and amplifier applica- tions. Features: Radiation graphs available Top Al - 12 k? min. Backside Au - 6.5 k? nom. Emitter 2.3 mils x 7.0 mils Base 5.0 mils x 11.0 mils Die Thickness Chip Area Top Surface 30 mils x 30 mils Silox Passivated Mechanical Specifications Metallization Bonding Pad Size 8 mils nominal Parameter Test conditions Min Max Unit BV CBO I C = 100 ?A, I E = 0 140 --- V dc BV EBO I E = 100 ?A, I C = 0 7.0 --- V dc I CBO V CB = 40 V, I E = 0 --- 10 nA h FE I C = 150 mA dc, V CE = 10 V 100 300 --- Electrical Characteristics T A = 25 o C Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 ?s, duty cycle less than 2%. 相关器件：SD3019F SQ3019F SQ3019 2N3700UB 2N3700 2N3057A 2N3057 2N3019UB 2N3019S 2N3019

2C3019

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Chip Type 2C3019 Geometry 4500 Polarity PNP
器件厂商：SEMICOA [Semicoa Semiconductor]
厂商主页：http://www.snscorp.com/Semicoa.htm
文件大小：31.35KB
文件页数：1
PDF阅读：2C3019.pdf (点击阅读器件资料)

摘要：
Chip Ty pe 2C3019
Geometry 4500
Polarity PNP
Data Sheet No. 2C3019
Generic Packaged Parts:
2N3019, 2N3057
Chip type 2C3019 by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
Part Numbers:
2N3019 , 2N3019S , 2N3019UB, 2N3057, 2N3057A ,
2N3700 , 2N3700UB , SD3019F, SQ3019, SQ3019F
APPLICATIONS: Designed for general
purpose switching and amplifier applica-
tions.
Features: Radiation graphs available
Top Al - 12 k? min.
Backside Au - 6.5 k? nom.
Emitter 2.3 mils x 7.0 mils
Base 5.0 mils x 11.0 mils
Die Thickness
Chip Area
Top Surface
30 mils x 30 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter Test conditions Min Max Unit
BV CBO I C = 100 ?A, I E = 0 140 --- V dc
BV EBO I E = 100 ?A, I C = 0 7.0 --- V dc
I CBO V CB = 40 V, I E = 0 --- 10 nA
h FE I C = 150 mA dc, V CE = 10 V 100 300 ---
Electrical Characteristics
T A = 25 o C
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 ?s, duty cycle less than 2%.

相关器件：SD3019F SQ3019F SQ3019 2N3700UB 2N3700 2N3057A 2N3057 2N3019UB 2N3019S 2N3019

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