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2C2904A
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Chip Type 2C2904A Geometry 0600 Polarity PNP 器件厂商：SEMICOA [Semicoa Semiconductor] 厂商主页：http://www.snscorp.com/Semicoa.htm 文件大小：29.38KB 文件页数：1 PDF阅读：2C2904A.pdf (点击阅读器件资料) 摘要： Chip Ty pe 2C2904A Geometry 0600 Polarity PNP Data Sheet No. 2C2904A Generic Packaged Parts: 2N2904A Chip type 2C2904A by Semicoa Semiconductors provides perfor- mance similar to these devices. Product Summary: Part Numbers: 2N2904A, 2N2904, 2N2906A, 2N2906, 2N2904AUB, SD2904A, SD2904AF, SQ2904A, SQ2904AF, 2N3485, 2N3485A APPLICATIONS: Designed for gen- eral purpose switching and amplifier applications. Features: Top Al - 18 k? min. Backside Au - 6.5 k? nom. Emitter 4.0 mils x 4.0 mils Base 4.0 mils x 4.0 mils Die Thickness Chip Area Top Surface 20 mils x 20 mils Silox Passivated Mechanical Specifications Metallization Bonding Pad Size 8 mils nominal Parameter Test conditions Min Max Unit BV CEO I C = 10.0 mA, I B = 0 60 --- V dc BV CBO I C = 10 ?A, I E = 0 60 --- V dc BV EBO I E = 10 ?A, I C = 0 5.0 --- V dc I CBO V CB = 50 V, I E = 0 --- 10 nA h FE I C = 150 mA dc, V CE = 10 V 40 120 --- Electrical Characteristics T A = 25 o C Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 ?s, duty cycle less than 2%. 相关器件：SD2904AF SD2904A SQ2904A SQ2904AF 2N3485A 2N3485 2N2906 2N2906A 2N2904AUB 2N2904A 2N2904

2C2904A

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Chip Type 2C2904A Geometry 0600 Polarity PNP
器件厂商：SEMICOA [Semicoa Semiconductor]
厂商主页：http://www.snscorp.com/Semicoa.htm
文件大小：29.38KB
文件页数：1
PDF阅读：2C2904A.pdf (点击阅读器件资料)

摘要：
Chip Ty pe 2C2904A
Geometry 0600
Polarity PNP
Data Sheet No. 2C2904A
Generic Packaged Parts:
2N2904A
Chip type 2C2904A by Semicoa
Semiconductors provides perfor-
mance similar to these devices.
Product Summary:
Part Numbers:
2N2904A, 2N2904, 2N2906A, 2N2906,
2N2904AUB, SD2904A, SD2904AF, SQ2904A,
SQ2904AF, 2N3485, 2N3485A
APPLICATIONS: Designed for gen-
eral purpose switching and amplifier
applications.
Features:
Top Al - 18 k? min.
Backside Au - 6.5 k? nom.
Emitter 4.0 mils x 4.0 mils
Base 4.0 mils x 4.0 mils
Die Thickness
Chip Area
Top Surface
20 mils x 20 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter Test conditions Min Max Unit
BV CEO I C = 10.0 mA, I B = 0 60 --- V dc
BV CBO I C = 10 ?A, I E = 0 60 --- V dc
BV EBO I E = 10 ?A, I C = 0 5.0 --- V dc
I CBO V CB = 50 V, I E = 0 --- 10 nA
h FE I C = 150 mA dc, V CE = 10 V 40 120 ---
Electrical Characteristics
T A = 25 o C
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 ?s, duty cycle less than 2%.

相关器件：SD2904AF SD2904A SQ2904A SQ2904AF 2N3485A 2N3485 2N2906 2N2906A 2N2904AUB 2N2904A 2N2904

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