2C2484资料PDF,2C2484功能介绍,Datasheet由SEMICOA公司出品

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2C2484
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Chip Type 2C2484 Geometry 0307 Polarity NPN 器件厂商：SEMICOA [Semicoa Semiconductor] 厂商主页：http://www.snscorp.com/Semicoa.htm 文件大小：31.52KB 文件页数：1 PDF阅读：2C2484.pdf (点击阅读器件资料) 摘要： Chip Ty pe 2C2484 Geometry 0307 Polarity NPN Data Sheet No. 2C2484 Generic Packaged Part: 2N2483, 2N2484, 2N2920, 2N930 Chip type 2C2484 by Semicoa Semi- conductors provides performance similar to these devices. Product Summary: Part Numbers: 2N930, 2N2483, 2N2484 , 2N2920 APPLICATIONS: Designed for high speed switching applications. Features: ? High speed switching capabilities Top Al - 19.5 k? min. Backside Au - 6.5 k? nom. Emitter 3.6 mils diameter Base 2.5 mils diameter Die Thickness Chip Area Top Surface 18 mils x 18 mils Silox Passivated Mechanical Specifications Metallization Bonding Pad Size 8 mils nominal Parameter Test conditions M in Max Unit BV CEO I C = 10.0 mA, I B = 0 60 --- V dc BV CBO I C = 10 ?A, I E = 0 60 --- V dc I CBO V CB = 45 Vc, I E = 0 --- 10 nA h FE I C = 100 ?A dc, V CE = 5.0 V 175 --- --- E lectrical Charac teristics T A = 25 o C Due to li m itations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 ?s, duty cycle less than 2%. 相关器件：2N930 2N2920 2N2484 2N2483

2C2484

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Chip Type 2C2484 Geometry 0307 Polarity NPN
器件厂商：SEMICOA [Semicoa Semiconductor]
厂商主页：http://www.snscorp.com/Semicoa.htm
文件大小：31.52KB
文件页数：1
PDF阅读：2C2484.pdf (点击阅读器件资料)

摘要：
Chip Ty pe 2C2484
Geometry 0307
Polarity NPN
Data Sheet No. 2C2484
Generic Packaged Part:
2N2483, 2N2484, 2N2920,
2N930
Chip type 2C2484 by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
Part Numbers:
2N930, 2N2483, 2N2484 , 2N2920
APPLICATIONS: Designed for high
speed switching applications.
Features:
? High speed switching capabilities
Top Al - 19.5 k? min.
Backside Au - 6.5 k? nom.
Emitter 3.6 mils diameter
Base 2.5 mils diameter
Die Thickness
Chip Area
Top Surface
18 mils x 18 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter Test conditions M in Max Unit
BV CEO I C = 10.0 mA, I B = 0 60 --- V dc
BV CBO I C = 10 ?A, I E = 0 60 --- V dc
I CBO V CB = 45 Vc, I E = 0 --- 10 nA
h FE I C = 100 ?A dc, V CE = 5.0 V 175 --- ---
E lectrical Charac teristics
T A = 25 o C
Due to li m itations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 ?s, duty cycle less than 2%.

相关器件：2N930 2N2920 2N2484 2N2483

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