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2C2222A
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Chip Type 2C2222A Geometry 0400 Polarity NPN 器件厂商：SEMICOA [Semicoa Semiconductor] 厂商主页：http://www.snscorp.com/Semicoa.htm 文件大小：29.63KB 文件页数：1 PDF阅读：2C2222A.pdf (点击阅读器件资料) 摘要： Chip Ty pe 2C2222A Geometry 0400 Polarity NPN Data Sheet No. 2C2222A Generic Packaged Parts: 2N2219, 2N2219A, 2N2222, 2N2222A Chip type 2C2222A by Semicoa Semiconductors provides perfor- mance similar to these devices. Product Summary: Part Numbers: 2N2222A , 2N2222, 2N2219, 2N2219A, 2N2219AL, 2N2222AUB , SD2222A, SD2222AF, SQ2222A, SQ2222AF, 2N5582, 2N6989, 2N6990 APPLICATIONS: Designed for general purpose switching and amplifier applica- tions. Features: Medium power ratings Top Al - 24 k? min. Backside Au - 6.5 k? nom. Emitter 4.0 mils x 4.0 mils Base 4.0 mils x 4.0 mils Die Thickness Chip Area Top Surface 20 mils x 20 mils Silox Passivated Mechanical Specifications Metallization Bonding Pad Size 8 mils nominal Parameter Test conditions Min Max Unit BV CEO I C = 10 mA, I B = 0 40 --- V dc BV CBO I C = 10 ?A, I E = 0 75 --- V dc BV EBO I E = 10 ?A, I C = 0 6.0 --- V dc I CBO V CB = 50 V, I E = 0 --- 10 nA dc h FE I C = 150 mA dc, V CE = 10 V 100 300 --- Electrical Characteristics T A = 25 o C Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 ?s, duty cycle less than 2%. 相关器件：SD2222A SD2222AF SQ2222A SQ2222AF 2N6990 2N6989 2N5582 2N2222AUB 2N2222A 2N2222 2N2219AL 2N2219A 2N2219

2C2222A

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Chip Type 2C2222A Geometry 0400 Polarity NPN
器件厂商：SEMICOA [Semicoa Semiconductor]
厂商主页：http://www.snscorp.com/Semicoa.htm
文件大小：29.63KB
文件页数：1
PDF阅读：2C2222A.pdf (点击阅读器件资料)

摘要：
Chip Ty pe 2C2222A
Geometry 0400
Polarity NPN
Data Sheet No. 2C2222A
Generic Packaged Parts:
2N2219, 2N2219A, 2N2222,
2N2222A
Chip type 2C2222A by Semicoa
Semiconductors provides perfor-
mance similar to these devices.
Product Summary:
Part Numbers:
2N2222A , 2N2222, 2N2219, 2N2219A, 2N2219AL,
2N2222AUB , SD2222A, SD2222AF, SQ2222A,
SQ2222AF, 2N5582, 2N6989, 2N6990
APPLICATIONS: Designed for general
purpose switching and amplifier applica-
tions.
Features: Medium power ratings
Top Al - 24 k? min.
Backside Au - 6.5 k? nom.
Emitter 4.0 mils x 4.0 mils
Base 4.0 mils x 4.0 mils
Die Thickness
Chip Area
Top Surface
20 mils x 20 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter Test conditions Min Max Unit
BV CEO I C = 10 mA, I B = 0 40 --- V dc
BV CBO I C = 10 ?A, I E = 0 75 --- V dc
BV EBO I E = 10 ?A, I C = 0 6.0 --- V dc
I CBO V CB = 50 V, I E = 0 --- 10 nA dc
h FE I C = 150 mA dc, V CE = 10 V 100 300 ---
Electrical Characteristics
T A = 25 o C
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 ?s, duty cycle less than 2%.

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