1/20April 2002
M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
a73 SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
a73 ACCESS TIME: 55ns
a73 PROGRAMMING TIME
– 10µs per Byte typical
a73 8 UNIFORM 64 Kbytes MEMORY BLOCKS
a73 PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
a73 ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
a73 UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
a73 LOW POWER CONSUMPTION
– Standby and Automatic Standby
a73 100,000 PROGRAM/ERASE CYCLES per
BLOCK
a73 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
a73 ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
TSOP32 (N)
8 x 20mm
PLCC32 (K)
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
AI02953
19
A0-A18
W
DQ0-DQ7
V
CC
M29W040B
G
E
V
SS
8