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29LV650
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：64M (4M x 16) BIT 器件厂商：FUJITSU [Fujitsu Media Devices Limited] 厂商主页：http://edevice.fujitsu.com/fmd/en/index.html 文件大小：625.43KB 文件页数：57 PDF阅读：29LV650.pdf (点击阅读器件资料) 摘要： DS05-20882-2E FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 64M (4M · 16) BIT MBM29LV650UE/651UE -90/12 nnnn DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan- dard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Typically, each sector can be programmed and verified in about 0.5 seconds. (Continued) nnnn PRODUCT LINEUP nnnn PACKAGES Part No. MBM29LV650UE/651UE Ordering Part No. VCC = 3.3 V 90 — VCC = 3.0 V —12 Max. Address Access Time (ns) 90 120 Max. CE Access Time (ns) 90 120 Max. OE Access Time (ns) 35 50 +0.3 V –0.3 V +0.6 V –0.3 V (FPT-48P-M20)(FPT-48P-M19) Marking Side Marking Side 48-pin plastic TSOP (I) 相关器件：MBM29LV650UE-90 MBM29LV650UE90TN MBM29LV651UE90TR MBM29LV650UE MBM29LV650UE-12 MBM29LV650UE12TN MBM29LV650UE12TR MBM29LV650UE90TR MBM29LV651UE MBM29LV651UE-12 MBM29LV651UE-90 MBM29LV651UE12TN MBM29LV651UE12TR MBM29LV651UE90TN

29LV650

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：64M (4M x 16) BIT
器件厂商：FUJITSU [Fujitsu Media Devices Limited]
厂商主页：http://edevice.fujitsu.com/fmd/en/index.html
文件大小：625.43KB
文件页数：57
PDF阅读：29LV650.pdf (点击阅读器件资料)

摘要：
DS05-20882-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
64M (4M · 16) BIT
MBM29LV650UE/651UE -90/12
nnnn DESCRIPTION
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The
device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and
5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard
EPROM programmers.
To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable
(OE) controls.
The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan-
dard. Commands are written to the command register using standard microprocessor write timings. Register
contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations.
Typically, each sector can be programmed and verified in about 0.5 seconds.
(Continued)
nnnn PRODUCT LINEUP
nnnn PACKAGES
Part No. MBM29LV650UE/651UE
Ordering Part No.
VCC = 3.3 V
90 —
VCC = 3.0 V
—12
Max. Address Access Time (ns) 90 120
Max. CE Access Time (ns) 90 120
Max. OE Access Time (ns) 35 50
+0.3 V
–0.3 V
+0.6 V
–0.3 V
(FPT-48P-M20)(FPT-48P-M19)
Marking Side
Marking Side
48-pin plastic TSOP (I)

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